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| R N N-CHANNEL MOSFET JCS640 MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 18.0 A 200 V 0.18 47 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 48pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 48pF) dv/dt RoHS ORDER MESSAGE Order codes JCS640C-O-C-N-B JCS640F-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS640C JCS640F Package TO-220C TO-220MF Packaging Tube Tube 201007A 1/10 R JCS640 ABSOLUTE RATINGS (Tc=25) JCS640C 200 18 11.4 18* 11.4* JCS640F Value Unit V A A Parameter Drain-Source Voltage Drain Current Symbol VDSS ID T=25 T=100 IDM -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Current note 1 3 Peak Diode Recovery dv/dt note 3 72 72* A VGSS 30 V EAS 259 mJ IAR 18 A EAR 14 mJ dv/dt 5.5 V/ns Power Dissipation PD TC=25 -Derate above 25 TJTSTG 140 44 W 1.12 0.35 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 TL 300 * *Drain current limited by maximum junction temperature 201007A 2/10 R JCS640 Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250A 2.0 4.0 V BVDSS ID=250A, VGS=0V 200 V BVDSS/ ID=250A, referenced to 25 TJ VDS=200V,VGS=0V, TC=25 VDS=160V, IGSSF VDS=0V, TC=125 - 0.2 - V/ IDSS - - 10 100 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=9A - 0.15 0.18 gfs VDS = 40V, ID=9Anote 4 - 13.5 - S Dynamic Characteristics Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1330 1760 pF 181 245 48 65 pF pF 201007A 3/10 R JCS640 td(on) tr td(off) tf Qg Qgs Qgd VDS =160V , ID=18A VGS =10V note 45 VDD=100V,ID=18A,RG=25 note 45 54 70 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 104 162 327 395 107 145 47 8 22 62 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 18 A ISM - - 72 A VGS=0V, IS=18.0A - - 1.48 V trr Qrr VGS=0V, IS=18.0A dIF/dt=100A/s (note 4) - 195 1.48 - ns C THERMAL CHARACTERISTIC JCS640C 0.89 62.5 Notes: 1Pulse width limited by maximum junction temperature 2L=1.2mH, IAS=18A, VDD=50V, RG=25 ,Starting TJ=25 3ISD 18A,di/dt 200A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature Max JCS640F 2.85 62.5 Parameter Thermal Resistance, Junction to Case Symbol Rth(j-c) Unit /W /W Rth(j-A) Thermal Resistance, Junction to Ambient 1 2L=1.2mH, IAS=18A, VDD=50V, RG=25 , TJ=25 3ISD 18A,di/dt 200A/s,VDDBVDSS, TJ=25 4300s,2 5 201007A 4/10 R JCS640 VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Top ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics 10 ID Drain Current[A] ID [A] 10 25 150 1 Notes: 1. 250s pulse test 2. TC=25 1 1 10 0.1 Notes: 1.250s pulse test 2.VDS=40V 2 4 6 8 10 VDS [V] VGS Gate-Source Voltage[V] On-Resistance Variation vs. Drain Current and Gate Voltage 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.14 Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(on) Drain-Source On Resistance [] VGS=10V VGS=20V IDR Reverse Drain Current[A] 10 150 25 1 Note:Tj=25 0 2 4 6 8 10 12 14 16 18 20 22 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 ID [A] V S D Source-Drain voltage[V] Capacitance Characteristics 12 Gate Charge Characteristics VDS=40V VDS=100V VDS=160V 10 VGS Gate Source Voltage[V] 8 6 4 2 0 0 10 20 30 40 50 Qg Toltal Gate Charge [nC] 201007A 5/10 R JCS640 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature vs. Temperature 1.2 4.0 3.5 BVDS(Normalized) 1.1 3.0 R D (on ) (Normalized) 2.5 2.0 1.5 1.0 0.5 0.0 -75 1.0 0.9 Notes: 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 0.8 -75 Notes: 1. VGS=10V 2. ID=9A -50 -25 0 25 50 75 100 125 150 Tj [] Tj [] Maximum Safe Operating Area For JCS640C 10 2 Maximum Safe Operating Area For JCS640F 10 2 Operation in This Area is Limited by RDS(ON) 10s 100s 1ms 10ms 100ms Operation in This Area is Limited by RDS(ON) 10s 100s ID Drain Current [A] ID Drain Current [A] 10 1 10 1 1ms 10ms 10 0 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 DC 10 0 100ms Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 DC 10 VDS Drain-Source Voltage [V] 10 1 10 2 10 -1 10 VDS Drain-Source Voltage [V] 10 1 10 2 Maximum Drain Current vs. Case Temperature 20 18 16 ID Drain Current [A] 14 12 10 8 6 4 2 0 25 50 75 100 125 150 TC Case Temperature [ ] 201007A 6/10 R JCS640 Transient Thermal Response Curve For JCS640C ELECTRICAL CHARACTERISTICS (curves) (t) Thermal Response 1 D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 N 1 2 3 o te s : Z J C (t)= 0 .8 9 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) JC 0 .0 1 s in g le p u ls e P Z DM t1 t2 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS640F (t) Thermal Response 1 D = 0 .5 0 .2 0 .1 0 .0 5 N 1 2 3 o te s : Z J C (t)= 2 .8 5 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) 0 .1 0 .0 2 0 .0 1 JC P Z DM s in g le p u ls e 0 .0 1 1 E -5 t1 t2 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 201007A 7/10 R JCS640 Unitmm PACKAGE MECHANICAL DATA TO-220C 201007A 8/10 R JCS640 Unitmm PACKAGE MECHANICAL DATA TO-220MF 201007A 9/10 R JCS640 NOTE Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201007A 10/10 |
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